Dr Matthias Schmidt

Contact / Addess:

E-mail

Phone +49 (0) 341 235 1358
Fax +49 (0) 341 235 450822


Helmholtz Centre for Environmental Research - UFZ
Permoserstrasse 15
04318 Leipzig

Dr. Matthias Schmidt

Curriculum Vitae


Since June 2014 Head of the high-resolution imaging group
at ProVIS - Centre for Chemical Microscopy
Helmholtz Centre for Environmental Research – UFZ
Department of Isotope Biogeochemistry
2013-2014 Post-Doctoral Fellow
Max-Planck Institute for Microstructure Physics
Halle (Saale), Germany
2012-2013 Post-Doctoral Fellow
University of Pretoria
Department of Physics
Pretoria, South Africa.
Jan 2012 Ph.D. in Physics
Universität Leipzig
Semiconductor Physics Group
Leipzig, Germany
Aug - Dec 2011 Research Assistant
Universität Leipzig
Faculty of Physics and Geosciences
Semiconductor Physics Group
Leipzig, Germany
2009 - 2011 Evangelisches Studienwerk Villigst eV.
Stipendiary
2007 - 2012
Ph.D. project in semiconductor physics at
Universität Leipzig
Faculty of Physics and Geoscience
Leipzig, Germany
and
Helmholtz-Centre Dresden-Rossendorf
Dept. of Ion-Beam Physics
Dresden, Germany
Dec 2006 Diploma in Physics
Universität Leipzig
Faculty of Physics and Geoscience
Germany

Field of Expertise

  • high-resolution imaging (scanning electron and helium-ion microscopy)
  • preparation of microbial samples for SEM and HIM
  • correlative microscopy
  • image-processing


Main Research Interests

  • development of helium-ion microscopy techniques for imaging of microbiological samples
  • bacteriophages and bacterial predators
  • microbial corrosion
  • bioleaching and biomineralisation
  • interactions between microbes plants and soil in the rhizosphere


Publications


  • M. Schmidt, P.J. Janse van Rensburg, W.E. Meyer and F.D. Auret,
    Observation of low-temperature annealing of a primary defect in gallium nitride,
    Physica B 439 64 (2014)
    DOI: 10.1016/j.physb.2013.11.008

  • M. Schmidt, H. de Meyer, P.J. Janse van Rensburg, W.E. Meyer and F.D. Auret,
    Introduction and annealing of primary defects in proton-bombarded n-GaN,
    Phys. Status Solidi B 251, 211 (2014)
    DOI: 10.1002/pssb.201349191

  • W. Mtangi, M. Schmidt, F.D. Auret, W.E. Meyer, P.J. Janse van Rensburg, M. Diale, J.M. Nel, A.G.M. Das, F.C.C. Ling and A. Chawanda,
    A study of the T2 defect and the emission properties of the E3 deep level in annealed melt grown ZnO single crystals,
    J. Appl. Phys. 113, 124502 (2013)
    DOI: 10.1063/1.4796139

  • M. Schmidt, H. v. Wenckstern, R. Pickenhain and M. Grundmann,
    On the investigation of electronic defect states in ZnO thin films by space charge spectroscopy with optical excitation
    Solid-State Electron. 75, 48 (2012)
    DOI: 10.1016/j.sse.2012.04.043

  • M. Schmidt, M. Ellguth, R. Karsthof, H. v. Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, and F.C.C. Ling,
    On the T2 trap in zinc oxide thin films,
    Phys. Status Solidi B 249, 588 (2012)
    DOI: 10.1002/pssb.201147271

  • M. Schmidt, K. Brachwitz, F. Schmidt, M. Ellguth, H. v. Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, and W. Skorupa,
    Nickel-related defects in ZnO – A deep-level transient spectroscopy and photo-capacitance study,
    Phys. Status Solidi B 248, 1949 (2011)
    DOI: 10.1002/pssb.201046634

  • Z. Zhang, H. v. Wenckstern, M. Schmidt, and M. Grundmann,
    Wavelength selective metal-semiconductor-metal photodetectors based on (Mg,Zn)O-heterostructures,
    Appl. Phys. Lett. 99 083502 (2011)
    DOI: 10.1063/1.3628338

  • A. Lajn, M. Schmidt, H. v. Wenckstern,and M. Grundmann,
    Transparent rectifying contacts for visible-blind ultraviolet photo diodes based on ZnO,
    J. Electr. Mat. 40, 473 (2011)
    DOI: 10.1007/s11664-010-1395-x

  • M. Ellguth, M. Schmidt, H. v. Wenckstern, R. Pickenhain, and M. Grundmann,
    Characterization of point defects in ZnO thin films by optical deep level transient spectroscopy,
    Phys. Status Solidi B 248, 941 (2011)
    DOI: 10.1002/pssb.201046244

  • H. v. Wenckstern, K. Brachwitz, M. Schmidt, C.P. Dietrich, M. Ellguth, M. Stölzel, M. Lorenz and M. Grundmann,
    The E3 defect in MgZnO,
    J. Electr. Mat. 39, 584 (2010)
    DOI: 10.1007/s11664-009-0967-0

  • J. Chai, R.J. Mendelsberg, R.J. Reeves, J. Kennedy, H. v. Wenckstern, M. Schmidt, M. Grundmann, K. Doyle, T.H. Myers, and S.M. Durbin,
    Identification of a Deep Acceptor Level in ZnO due to Silver Doping,
    J. Electr. Mat. 39, 577 (2010)
    DOI: 10.1007/s11664-009-1025-7

  • M. Schmidt, M. Ellguth, F. Schmidt, T. Lüder, H. v. Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, and W. Skorupa,
    Defects in a nitrogen-implanted ZnO thin film,
    Phys. Status Solidi B 247, 1220 (2010)
    DOI: 10.1002/pssb.200945534

  • M. Schmidt, M. Ellguth, C. Czekalla, H. v. Wenckstern, R. Pickenhain, M. Grundmann, G. Brauer, W. Skorupa, M. Helm, Q. Gu, and F.C.C. Ling,
    Defects in zinc-implanted ZnO thin films,
    J. Vac. Sci. Technol., B 27 1597, (2009)
    DOI: 10.1116/1.3086659

  • M. Schmidt, R. Pickenhain, and M. Grundmann,
    Exact solutions for the capacitance of space charge regions at semiconductor interfaces,
    Solid-State Electron. 51, 1002 (2007)
    DOI: 10.1016/j.sse.2007.04.004


Theses

Ph.D thesis (Universität Leipzig, 2012):

Space-Charge Spectroscopy applied to Defect Studies in Ion-Implanted Zinc Oxide Thin Films


Diploma thesis (Universität Leipzig, 2006):

Theoretische Untersuchungen zu Raumladungszonen an Halbleitergrenzflächen
(Theoretical Investigations of Space-Charge Regions at Semiconductor Interfaces)