Publication Details |
| Category | Text Publication |
| Reference Category | Journals |
| DOI | 10.1016/j.jallcom.2010.07.041 |
| Title (Primary) | Semiconducting properties of Ge-doped BaSnO3 ceramic |
| Author | Köferstein, R.; Yakuphanoglu, F. |
| Source Titel | Journal of Alloys and Compounds |
| Year | 2010 |
| Department | TUCHEM |
| Volume | 506 |
| Issue | 2 |
| Page From | 678 |
| Page To | 628 |
| Language | englisch |
| Keywords | Electrical conductivity; Optical properties; Sintering; Perovskite |
| Abstract | The electrical and optical properties of Ge-doped BaSnO3 ceramics sintered at various temperatures have been investigated to determine their semiconductor behavior. The electrical conductivity of Ge-doped BaSnO3 samples increases with increase in temperature, confirming that the samples exhibit a semiconductor behavior. A maximum conductivity value of 6.31 × 10-9 S/cm was observed for the sample sintered at 1200 °C. The optical band gaps of the Ge-doped BaSnO3 samples were determined by means of reflectance spectra. The variation of optical band gap with temperature was analyzed using Eg(T) = Ego + ßT relation. The rate of change of the band gap ß of BaSn0.99Ge0.01O3 was found to be 7.6 × 10-4 (eV/°C). A minimum optical band gap value of 2.95 eV was observed for the sample sintered at 1400 °C. It is evaluated that BaSn0.99Ge0.01O3 is a wide band gap semiconductor and its semiconducting properties change with sintering temperature. |
| Persistent UFZ Identifier | https://www.ufz.de/index.php?en=20939&ufzPublicationIdentifier=10192 |
| Köferstein, R., Yakuphanoglu, F. (2010): Semiconducting properties of Ge-doped BaSnO3 ceramic J. Alloy. Compd. 506 (2), 678 - 628 10.1016/j.jallcom.2010.07.041 |
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