Details zur Publikation |
Kategorie | Textpublikation |
Referenztyp | Zeitschriften |
DOI | 10.1016/j.jallcom.2010.07.041 |
Titel (primär) | Semiconducting properties of Ge-doped BaSnO3 ceramic |
Autor | Köferstein, R.; Yakuphanoglu, F. |
Quelle | Journal of Alloys and Compounds |
Erscheinungsjahr | 2010 |
Department | TUCHEM |
Band/Volume | 506 |
Heft | 2 |
Seite von | 678 |
Seite bis | 628 |
Sprache | englisch |
Keywords | Electrical conductivity; Optical properties; Sintering; Perovskite |
Abstract | The electrical and optical properties of Ge-doped BaSnO3 ceramics sintered at various temperatures have been investigated to determine their semiconductor behavior. The electrical conductivity of Ge-doped BaSnO3 samples increases with increase in temperature, confirming that the samples exhibit a semiconductor behavior. A maximum conductivity value of 6.31 × 10-9 S/cm was observed for the sample sintered at 1200 °C. The optical band gaps of the Ge-doped BaSnO3 samples were determined by means of reflectance spectra. The variation of optical band gap with temperature was analyzed using Eg(T) = Ego + ßT relation. The rate of change of the band gap ß of BaSn0.99Ge0.01O3 was found to be 7.6 × 10-4 (eV/°C). A minimum optical band gap value of 2.95 eV was observed for the sample sintered at 1400 °C. It is evaluated that BaSn0.99Ge0.01O3 is a wide band gap semiconductor and its semiconducting properties change with sintering temperature. |
dauerhafte UFZ-Verlinkung | https://www.ufz.de/index.php?en=20939&ufzPublicationIdentifier=10192 |
Köferstein, R., Yakuphanoglu, F. (2010): Semiconducting properties of Ge-doped BaSnO3 ceramic J. Alloy. Compd. 506 (2), 678 - 628 10.1016/j.jallcom.2010.07.041 |